Semiconductor device and method for assembling the same

ABSTRACT

In a semiconductor device provided with a thinned semiconductor element, the present invention intends to provide a semiconductor device in which a damage of a semiconductor element is inhibited from occurring in the neighborhood of an outer periphery and thereby the reliability can be secured. In order to realize the object, the invention relates to a semiconductor device in which to a rear surface of a thinned semiconductor element on a front surface of which a plurality of external connection terminals is formed, a plate higher in the rigidity than the semiconductor element is adhered with a resin binder, wherein an outer shape of the plate is made larger than that of the semiconductor element, and the resin binder covers a side face of the semiconductor element to form a reinforcement portion for reinforcing a periphery of the semiconductor element.

TECHNICAL FIELD

The present invention relates to a highly reliable semiconductor deviceand an assembling method thereof.

BACKGROUND ART

As a structure for mounting a semiconductor device that is made of apackaged semiconductor element on a circuit board, a structure in whicha projected electrode such as a solder bump formed on a semiconductordevice is bonded to a base plate is known. In a semiconductor devicehaving such a structure, an attempt to make a semiconductor device asthin as possible, that is, 150 μm or less is in progress. This intends,by reducing stress during the heat cycle, to realize high bondingreliability after the mounting. That is, when an environment temperaturevaries after the mounting, owing to difference of thermal expansioncoefficients of a semiconductor and a work, at a bonding portion of thesemiconductor element and a solder bump, stress is generated. By makingthe semiconductor element thinner, the stress is intended to reduce.

A mounting structure that is formed of such a thinned semiconductorelement will be explained with reference to the drawings. FIG. 11A is asectional view of an existing mounting structure and FIG. 11B is adiagram showing a deformed state of a semiconductor device in anexisting mounting structure. In FIG. 11A, on base plate 10,semiconductor device 1 is mounted, and to electrode 10 a formed on a topsurface of base plate 10, bump 3 that is disposed on a circuit formationsurface of semiconductor element 2 with solder as a formation materialis bonded. Semiconductor element 2, as mentioned above, is made thinnerwith an intention of suppressing the stress generated at a bondingportion of the semiconductor element and the bump as small as possible.

FIG. 11B shows a state where in a mounting structure in whichsemiconductor device 1 having such thinned semiconductor element 2 ismounted on base plate 10, thermal contraction stress is generated inreflowed base plate 10. Since semiconductor element 2 is thinned andflexible, in accordance with the contraction deformation of base plate10, semiconductor element 2 deforms accordingly. In a mounting structurewhere after forwarding the thinning semiconductor element 2 having athickness of 150 μm or less is used, the deflection deformation ofsemiconductor element 2 shows a deflection shape (part shown with anarrow mark P1) in which semiconductor element 2 is concaved betweenrespective bumps 3; that is, as the thinning goes further, the moreexcellent traceability can be realized. It is demonstrated that thereby,a level of the stress generated at a bonding portion of semiconductorelement 2 and bump 3 can be effectively reduced.

However, in a mounting structure made of thinned semiconductor element2, disadvantages shown below are confirmed empirically and according tonumerical analysis. As shown in FIG. 11B, the deflection ofsemiconductor element 2 (shown with an arrow mark P2) rapidly increasesoutside bump 3 at the outermost periphery. Accordingly, in some cases,there is caused a phenomenon in that in the neighborhood of outermostperiphery bump 3, in the neighborhood of the outside of bump 3, a crackis generated on a bottom surface of semiconductor element 2, andsemiconductor element 2 is broken from the crack. That is, there is aproblem in that as the semiconductor element is made thinner, while thestress generated in the solder bump is lowered, the neighborhood of theouter periphery of the semiconductor element is locally broken.

DISCLOSURE OF THE INVENTION

The present invention intends to provide a semiconductor device that, ina semiconductor device including a thinned semiconductor element, caninhibit a semiconductor element from being broken in the neighborhood ofan outer periphery portion and thereby secure the reliability.

In order to realize the above object, a semiconductor device accordingto the present invention is a semiconductor device in which on a rearsurface of a semiconductor element on a front surface of which aplurality of external connection terminals is formed, a integrated bodyhigher in the rigidity than the semiconductor element is adhered with aresin binder, wherein an outer shape of the integrated body is madelarger than that of the semiconductor element and a side face of thesemiconductor element is covered with the resin binder to reinforce aperiphery of the semiconductor element.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective view of a semiconductor device according toembodiment 1 of the present invention.

FIG. 1B is a partial sectional view of a semiconductor device accordingto embodiment 1 of the invention.

FIGS. 2A through 2E are diagrams for explaining steps of an assemblingmethod of a semiconductor device according to embodiment 1 of theinvention.

FIG. 3 is a perspective view of a plate member that is used in asemiconductor device according to embodiment 1 of the invention.

FIG. 4 is a perspective view of an electronic component mounting devicethat is used in assembling a semiconductor device according toembodiment 1 of the invention.

FIG. 5 is a perspective view of a dicing machine that is used inassembling a semiconductor device according to embodiment 1 of theinvention.

FIG. 6 is a partial sectional view of a dicing machine that is used inassembling a semiconductor device according to embodiment 1 of theinvention.

FIG. 7A is a sectional view of a mounting structure according toembodiment 1 of the invention.

FIG. 7B is a partial sectional view of amounting structure according toembodiment 1 of the invention.

FIG. 8A is a perspective view of a semiconductor device according toembodiment 1 of the invention.

FIG. 8B is a plan view of a semiconductor device according to embodiment1 of the invention.

FIGS. 9A through 9D are diagrams for explaining steps of an assemblingmethod of a semiconductor device according to embodiment 2 of theinvention.

FIG. 10A is a perspective view of a semiconductor device according toembodiment 3 of the invention.

FIG. 10B is a partial sectional view of a semiconductor device accordingto embodiment 3 of the invention.

FIG. 11A is a sectional view of an existing mounting structure.

FIG. 11B is a diagram showing a deformation state of a semiconductordevice in an existing mounting structure.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1

With reference to FIGS. 1A and 1B, a semiconductor device will beexplained. In FIGS. 1A and 1B, semiconductor device 1 has aconfiguration in which on a rear surface (that is, second surface) ofsemiconductor element 2 plate 4 (integrated body) is adhered with resinbinder 5 and, on a plurality of electrodes 2 a that are externalconnection terminals formed along a periphery of a surface (that is,first surface) of semiconductor element 2, bumps 3 are formed.

Semiconductor element 2 here is in a state thinned by a method such asmechanical polishing or etching. In general, in a state where asemiconductor element is mounted on a base plate through bumps, thesmaller a thickness of the semiconductor element is, the more excellentthe reliability of the bonding after mounting is. This is because evenwhen owing to difference of stresses of semiconductor element 2 and abase plate the stresses try to concentrate at a bonding portion of bump3, owing to generation of deformation (deflection) in a thicknessdirection of semiconductor element 2 itself, the stress is dispersed.Accordingly, in the present embodiment, as mentioned above,semiconductor element 2 is thinned so as to have a thickness t1 in therange of 10 to 150 μm, and thereby semiconductor element 2 is allowed todeform (deflect) in a thickness direction.

In the thinning, a surface opposite to a circuit formation surface(first surface) of semiconductor element 2 is roughly processed by meansof mechanical polishing with a grinding stone or the like followed byapplying a finishing process by means of dry etching or wet etching witha chemical. When the mechanical polishing is applied, on a rear surfacea damaged layer including many micro-cracks is formed. The damaged layercauses a decrease in the flexural strength of the semiconductor element.However, when the damaged layer is removed by the finishing, theflexural strength of semiconductor element 2 can be increased.

Plate 4 makes easy to stably hold semiconductor device 1 in handlingsuch as the mounting of semiconductor device 1 and has a function ofprotecting semiconductor device 1 that is mounted on a base plate or thelike from an external force. Accordingly, as plate 4, one in which astructural material such as metal, ceramics or resin is processed into ashape that satisfies the above function, that is, a thickness t2 havingthe rigidity higher than semiconductor element 2 and an external shapelarger than an external shape of semiconductor element 2 is used.

For resin binder 5 that adheres semiconductor element 2 with plate 4, amaterial that has low elastic coefficient and is deformable is used.Thereby, while semiconductor element 2 is allowed to deform by anecessary amount in a thickness direction, semiconductor element 2 canbe adhered to plate 4. That is, in a state where semiconductor device 1is mounted on a base plate, semiconductor element 2 can deform followingthe deformation of the base plate.

As shown in FIG. 1, resin binder 5 is formed stuck out of an edge ofelement 2 over an entire circumference of semiconductor element 2. Stuckout resin binder 5 a creeps up along side face 2 b of semiconductorelement 2 to form a shape that at least partially covers side face 2 b.It is not necessarily required to cover an entire surface in a thicknessdirection of side face 2 b; however, an edge on a side of plate 4 iscovered. The edge on a side of plate 4 is formed with a second surfaceof semiconductor device 1 and side face 2 b. Thus, resin binder 5 a thatcovers side face 2 b works as a reinforcement that reinforces aperiphery of semiconductor element 2.

At a periphery portion of semiconductor element 2, a fine crackgenerated when a semiconductor wafer is diced and individualsemiconductor elements 2 are cut out is likely to remain as it is, andin some cases damage is generated from this crack. Resin binder 5 a thatcovers side face 2 b has an effect of reinforcing a periphery portioncontaining such fine crack. Furthermore, as mentioned below, in a statewhere semiconductor device 1 is mounted on base plate 10, it has afunction of inhibiting semiconductor element 2 from excessivelydeforming owing to stress generated by difference of thermaldeformations of base plate 10 and semiconductor element 2 (FIGS. 7A and7B).

In the next place, with reference to FIGS. 2A through 2E, a method ofassembling semiconductor device 1 will be explained.

In FIG. 2A, plate member 6 is an intermediate component before plates 4that constitute part of semiconductor device 1 are cut off. As shown inFIG. 3, on a top surface of plate member 6, raised partitions 6 aprotruded in lattice are disposed, and each of recess portions 6 bsurrounded by raised partitions 6 a is a semiconductor element adhesionregion to which semiconductor element 2 is adhered. Raised partitions 6a have a function as a dam that inhibits, when, as mentioned below,resin binder 5 for adhering semiconductor element 2 is coated in recessportion 6 b, resin binder 5 from overflowing the semiconductor adhesionregion and spreading into the surrounding.

On a position corresponding to raised partitions 6 a of a bottom surfaceof plate member 6, groove portions 6 c are formed. Groove portions 6 care formed by cutting grooves in lattice from a bottom surface side ofplate member 6 that has a thickness t4 and form thin-wall portions ofwhich thickness t3 is smaller than t4. The thin-wall portions coincidewith cutting places when plate 4 is separated from plate member 6.

In the next place, as shown in FIG. 2B, into respective recess portions6 b of plate member 6 dispenser 7 supplies resin binder 5 for adheringsemiconductor element 2 (first+ step). At the coating of resin binder 5,owing to the disposition of raised partitions 6 a as a dam portion inthe surroundings of recess portions 6 b, resin binder 5 can be inhibitedfrom overflowing the semiconductor adhesion region and spreading intothe surrounding.

Furthermore, at the coating, dispenser 7 is controlled so as todischarge an appropriate coating amount of resin binder 5 necessary forcovering side face 2 b of semiconductor element 2 when resin binder 5that is pressed down by semiconductor element 2 after the coating sticksout of an edge portion of semiconductor element 2.

Thereafter, plate member 6 to which resin binder 5 is supplied istransferred to a second step for adhering a semiconductor element. Inthe second step, as shown in FIGS. 2C and 2D, the semiconductor elements2 are each mounted on resin binder 5 that is coated on the plate member6 (mounting step), followed by heating resin binder 5 (heating step) tocure resin binder 5, and thereby rear surface sides of a plurality ofsemiconductor elements 2 are adhered to respective recesses 6 b of platemember 6 in an arranged manner with resin binder 5.

Electronic component mounting apparatus that is used for mountingsemiconductor elements 2 in the mounting step will be explained withreference to FIG. 4. In FIG. 4, on supply table 11, adhesive sheet 12 towhich semiconductor elements 2 are adhered in lattice is mounted. Belowsupply table 11, semiconductor separating mechanism 13 is disposed. Whensemiconductor separating mechanism 13 is driven by use of semiconductorseparating mechanism driver 14, ejector pin unit 13 a pushes up a bottomsurface of adhesive sheet 12. Thereby, semiconductor element 2 is peeledoff a top surface of adhesive sheet 12 and picked up by means ofmounting head 16.

On a lateral side of supply table 11, base plate holder 15 is disposed,and on base plate holder 15 resin binder supplied plate member 6 isheld. Above supply table 11 and base plate holder 15, mounting head 16that is driven by means of mounting head actuator 19 is disposed.Mounting head 16 is provided with suction nozzle 8, picks upsemiconductor element 2 from adhesive sheet 12 and mounts on platemember 6 on base plate holder 15.

Camera 17 grounded above supply table 11 takes an image of semiconductorelement 2 adhered to adhesive sheet 12. An image taken with camera 17undergoes recognition processing at semiconductor recognition unit 20 torecognize a position of semiconductor element 2 in adhesive sheet 12. Aresult of position recognition is sent to control unit 21 and as well tosemiconductor separating mechanism driver 14. Control unit 21, based onthe result of position recognition, controls mounting head actuator 19,and thereby, when mounting head 16 picks up semiconductor element 2,suction nozzle 8 and ejector pin unit 13 a are aligned withsemiconductor element 2 that is a target of picking up.

Camera 18 disposed above base plate holder 15 takes an image of platemember 6 held by base plate holder 15. An image taken with camera 18undergoes recognition processing at mounting position recognition unit22 to detect a semiconductor element mounting position in plate member6. A result of position recognition is sent to control unit 21. Controlunit 21, based on the result of position recognition, controls mountinghead actuator 19, and thereby, when mounting head 16 mountssemiconductor element 2, semiconductor element 2 held by suction nozzle8 is aligned with a detected mounting position.

When semiconductor element 2 is mounted on plate member 6 by use of theelectronic component mounting apparatus, as shown in FIG. 2C, a frontsurface (first surface) side on which bump 3 of semiconductor element 2is formed is sucked and held by means of suction nozzle 8 and a rearsurface (second surface) of semiconductor element 2 is pushed down onresin binder 5. At this time, in accordance with an amount of resinbinder 5 coated, a pressing height due to suction nozzle 8 iscontrolled, and thereby resin binder 5 stuck outside of a peripheryportion (portion shown with an arrow mark P3) of respectivesemiconductor elements 2 is made so as to creep up side face 2 b ofsemiconductor element 2 and cover side face 2 b (resin binder 5 a shownin FIG. 1B). At this time, as long as an edge portion of the rearsurface side of semiconductor element 2 where at the dicing damage tendsto remain is completely covered and reinforced, side face 2 b may becompletely covered or partially covered.

According to the embodiment, since semiconductor elements 2 are piece bypiece pressed on resin binder 5 by use of mounting head 16 and mounted,mounting load (pressing force) can be made smaller than that in the caseof mounting (adhering) in a lump. Accordingly, as the electroniccomponent mounting apparatus, a die bonder, a chip mounter and so on canbe diverted.

Plate member 6 on which semiconductor elements 2 are thus mounted istransferred to a heating furnace. Heating at a predetermined temperaturehere cures resin binder 5 as shown in FIG. 2D. At this time, resinbinder 5 stuck outside of a periphery portion of respectivesemiconductor elements 2, in the course of curing, temporally becomeslow in the viscosity, thereby further creeps up side face 2 b ofsemiconductor elements 2, followed by curing in this shape as it is withside face 2 b covered. Thereby, after curing of resin binder 5, resinbinder 5 a as a reinforcement shown in FIG. 1B is formed. Thereby, thesecond step comes to completion.

In the embodiment, after semiconductor elements 2 are mounted, platemember 6 is transferred to the heating furnace to cure resin binder 5;however, by use of mounting head 16 that incorporates heating means,semiconductor elements 2 may be heated while mounting.

That is, by use of the heating means incorporated in mounting head 16,suction nozzle 8 that holds semiconductor elements 2 may be heated andheat may be transferred through suction nozzle 8 and semiconductorelements 2 to heat resin binder 5. Furthermore, a heating coil or thelike wired from mounting head 16 may be disposed in the surroundings ofsuction nozzle 8 to directly heat suction nozzle 8. That is, when themounting means made of mounting head 16 and suction nozzle 8 areprovided with heating means, mounting step and heating step can besimultaneously carried out.

In the case of heating being carried out with mounting head 16, thededicated heating step shown in FIG. 2D may be omitted, and, when thuscarrying out, there is an advantage that by omitting the heating furnaceapparatus can be simplified. However, in this case, since a tact time ofmounting head 16 is restricted by a curing time, total productivity islowered than that in a case where the mounting step and the heating stepare separately performed. Furthermore, in the embodiment, an examplewhere, as resin binder 5, a thermosetting resin is used is shown.However, instead of this, a thermoplastic resin may be used.

Plate member 6 where resin binder 5 is cured thus is transferred to acutting step, here, as shown in FIG. 2E, plate member 6 to whichsemiconductor elements 2 are adhered is cut at cutting positions betweenadjacent semiconductor elements 2 by use of cutting blade 24 a (thirdstep). Thereby, plate member 6 is cut and separated into plates 4 forindividual semiconductor elements 2, and thereby assembly ofsemiconductor devices 1 comes to completion.

The cutting step will be explained with reference to FIGS. 5 and 6. FIG.5 shows a dicing machine that is used in the cutting. On a top surfaceof plate fixing table 23, plate member 6 on which semiconductor elements2 are mounted followed by curing resin is disposed. Above the platefixing table 23, cutting head 24 with cutting blade 24 a is disposed,and, by moving cutting head 24 in a X-direction or Y-direction withcutting blade 24 a rotating, plate member 6 is cut along cuttingpositions in accordance with grooves 6 c.

As shown in FIG. 6, on a top surface of the plate fixing table 23, foreach of positions corresponding to semiconductor elements 2 on platemember 6, suctioning retainer 25 is disposed, and on a top surface ofsuctioning retainer 25 suctioning groove 25 a is formed. Suctioninggroove 25 a is communicated with suctioning hole 23 a disposed inside ofplate fixing table 23, and suctioning hole 23 a is further connected tovacuum suctioning source 26. When vacuum suctioning source 26 is drivenwith a bottom surface of plate member 6 abutted on suctioning retainer25, plate member 6 is sucked and retained with suctioning retainer 25,and thereby a position of plate member 6 is fixed.

On raised partition 6 a of the plate member 6 thus fixed in a positionthereof, cutting blade 24 a is aligned, and when cutting blade 24 a islowered while rotating, a thin wall portion of groove 6 c is cut. Atthis time, by use of cutting blade 24 a of which blade width is smallerthan a separation between adjacent semiconductor elements 2, platemember 6 is cut with a shape in which plate 4 after separation intoindividual pieces sticks out of an end surface of semiconductor element2. Accordingly, in individually separated semiconductor devices 1, anexternal shape of plate 4 becomes larger than that of semiconductorelement 2.

Furthermore, at the cutting, since grooves 6 c are formed beforehand ona bottom surface, a thickness of a portion that is cut with cuttingblade 24 a is made smaller. Thereby, since a necessary lowering amountof cutting blade 24 a in the cutting step can be made as small aspossible, when the cutting blade is lowered, a tip end of the blade canbe inhibited from coming into contact with plate fixing table 23 tocause damage.

In the next place, an electronic component mounting structure that isformed by mounting the above semiconductor device 1 on a base plate willbe explained with reference to FIGS. 7A and 7B.

As shown in FIG. 7A, semiconductor device 1 is mounted on base plate 10when bump 3 is solder bonded and connected to electrode 10 a formed on atop surface of base plate 10. FIG. 7B shows a deformed state ofsemiconductor element 2 located outside of bump 3. In a structure wheresemiconductor element 2 that is thinned as shown in the embodiment isbonded through bump 3 to base plate 10, because of the stress generatedowing to difference of thermal deformations of semiconductor element 2and base plate 10, a range outside of bump 3 tends to deflect largelytoward base plate 10. A deflected state is shown with a dotted line inFIG. 7B. Owing to the deformation, in the neighborhood of the outside ofbump 3, on a bottom surface of semiconductor element 2 large surfacestress is generated, and thereby, in some cases, semiconductor element 2is damaged.

By contrast, as shown in the embodiment, in the case of semiconductordevice 1 reinforced with resin binder 5 a that covers side face 2 b ofsemiconductor element 2 being mounted on base plate 10, downwarddeflection of semiconductor element 2 in a range outside of bump 3 atoutermost periphery can be largely diminished. That is, resin binder 5 acovers side face 2 b of semiconductor element 2 and works so as toinhibit semiconductor element 2 from excessively deflecting. By thisoperation, semiconductor element 2 is inhibited from deflectingdownward, and thereby semiconductor element 2 can be inhibited frombeing damaged owing to the deflection thereof.

Like semiconductor device 101 shown in FIGS. 8A and 8B, sticking out ofresin binder 5 a from a periphery portion of semiconductor element 2 islimited in a direction of diagonal line of semiconductor element 2, andthereby a reinforcement portion that covers with resin binder 5 a a sideface of semiconductor element 2 may be formed only at corners ofsemiconductor element 2. In this case, at the coating of resin binder 5with dispenser 7 in FIG. 2B, so as to coat resin binder 5 only in arange shown in FIG. 8B, a coating trajectory of dispenser 7 is set inX-shape and a discharge amount from dispenser 7 is controlled. When aformation range of the reinforcement portion is limited thus to cornerportions of semiconductor element 2, the corner portions that are mostlikely to be damaged in a mounting state after completion of thesemiconductor device can be selectively reinforced.

Embodiment 2

Embodiment 2 will be explained with reference to FIGS. 9A through 9D.

According to the present embodiment 2, in a first step of supplying aresin binder to a plate member, without using a dispenser, a resinbinder formed beforehand in sheet is adhered.

In FIG. 9A, plate member 6A has a shape in which raised partitions 6 aon a top surface of plate member 6 shown in embodiment 1 are removed,and on a bottom surface of plate member 6A similar grooves 6 c areformed. On a top surface of plate member 6A, resin sheet 5A is adhered.Resin sheet 5A is one obtained by forming a resin material similar toresin binder 5 used in embodiment 1 in sheet and is adhered to platemember 6A owing to adhesiveness of resin binder 5 itself.

Thereafter, plate member 6 to which resin sheet 5A is adhered is sent toa second step for adhering semiconductor elements. In the second step,as shown in FIGS. 9B and 9C, a second surface of semiconductor element 2is mounted on resin sheet 5A that is adhered to plate member 6 (mountingstep), followed by heating resin sheet 5A (heating step) to cure a resincomponent of resin sheet 5A. Thereby, second surface (rear surface)sides of a plurality of semiconductor elements 2 are adhered throughcured resin sheet 5A to plate member 6 in an arranged state.

In the heating step, the heating at a predetermined temperature by useof a heating furnace enables to cure the resin component in resin sheet5A. At this time, resin binder 5 located outside of a periphery portionof respective semiconductor elements 2 becomes temporally lower in theviscosity in the course of curing to increase the fluidity, and therebycreeps up side face 2 b of semiconductor element 2 owing to surfacetension. When the heating is further continued, the resin component ofresin sheet 5A is cured with side face 2 b covered. Thereby, after thecuring of resin sheet 5A, resin binder 5 a as a reinforcement shown inFIG. 1B is formed. Thereby, the second step comes to completion.

Plate member 6A of which resin sheet 5A is thus completely cured istransferred to a cutting step, and here plate member 6A to whichsemiconductor elements 2 are adhered is cut between adjacentsemiconductor elements 2 (third step). Thereby, plate member 6A is cutand separated into plates 4 for individual semiconductor elements 2, andthereby assembly of semiconductor device 1 comes to completion.

Embodiment 3

Subsequently, a semiconductor device according to embodiment 3 will beexplained with reference to FIGS. 10A and 10B.

In FIG. 1A, semiconductor device 103 is formed by adhering plate 4(integrated body) to a rear surface (that is, second surface) ofsemiconductor element 30 with resin binder 5, and on a surface ofsemiconductor element 30 a plurality of bumps 3 is formed in lattice. Asshown in FIG. 10B, semiconductor element 30 is formed by formingre-wiring layer 9 on a top surface (electrode formation surface) ofsemiconductor element 2A that is thinned similarly to semiconductorelement 2 shown in embodiment 1.

At a periphery of a surface (that is, first surface) of semiconductorelement 2A, electrodes 2 a that are external connection terminals areformed, and the respective electrodes 2 a are in conduction withelectrodes 9 a formed in the number corresponding to that of electrodes2 a on a surface of re-wiring layer 9 through internal wirings 9 binside a re-wiring layer 9. On electrode 9 a, bump 3 is formed formounting semiconductor device 103.

In embodiment 3, by disposing re-wiring layer 9, in comparison withsemiconductor device 1 shown in embodiment 1, more bumps 3 can be formedin the same projected area, that is, denser mounting is made possible.In order to assemble the semiconductor device 103, in methods ofassembling semiconductor devices shown in embodiments 1 and 2,semiconductor element 2 has only to be replaced by semiconductor element30.

Thereby, on side face 30 a of semiconductor element 30, a reinforcementportion in which stuck out resin binder 5 a covers side face 30 a isformed. In semiconductor device 103 thus configured, by forming thereinforcement portion where side face 30 a of semiconductor element 30is covered, as mentioned above, the flexural deformation generated at aperiphery portion of semiconductor element 30 after mounting isinhibited from occurring, and thereby internal wirings 9 b insiderewiring-layer 9 can be inhibited from being disconnected.

In the above-explained embodiments, when commercially available epoxyresin, acrylic resin, urethane resin and silicone resin are used as theresin, a similar effect can be obtained. However, the present inventionis not restricted to these resins.

Industrial Applicability

A semiconductor device according to the present invention has aconfiguration where an outer shape of an integrated body that is adheredthrough a resin binder to a semiconductor device is made larger thanthat of the semiconductor device, and the resin binder is made so as tocover a side face of the semiconductor element to form a reinforcementportion for reinforcing a periphery of the semiconductor element.Accordingly, the semiconductor element can inhibit damage from occurringin the neighborhood of an outer periphery, and thereby the reliabilityafter the mounting can be secured.

Furthermore, an assembling method includes a step of supplying a resinbinder to a plate member that is an integrated body, a step of adheringrear surface sides of the semiconductor elements to the plate member inan arranged manner, and a step of cutting the plate member to which thesemiconductor elements are adhered between adjacent semiconductorelements. Thereby, a semiconductor device in which a thinnedsemiconductor element is adhered to an integrated body can be easily andefficiently assembled.

1. A semiconductor device comprising: a semiconductor element that has afirst surface on which an external connection terminal is formed and asecond surface that faces the first surface, and a thickness of 10 μm ormore and 150 μm or less; a plate that faces the second surface; and aresin binder that adheres the second surface and the plate, wherein theplate has the rigidity higher than that of the semiconductor element; anouter shape of the plate is larger than that of the semiconductorelement; and the resin binder covers a side face of the semiconductorelement, and furthermore at a portion that is interposed between thesecond surface and the plate the resin binder allows the semiconductorelement to deform in a thickness direction thereof.
 2. The semiconductordevice according to claim 1, wherein the resin binder covers an edgethat is formed of a side face and the second surface of thesemiconductor element.
 3. The semiconductor device according to claim 1,wherein the resin binder covers the side face over an entirecircumference of the semiconductor element.
 4. The semiconductor deviceaccording to claim 1, wherein the resin binder covers only a corner ofthe side face of the semiconductor element.
 5. (canceled)
 6. Thesemiconductor device according to claim 1, wherein the externalconnection terminal is provided with a bump.
 7. (canceled)
 8. (canceled)9. The semiconductor device according to claim 1, wherein thesemiconductor element includes a re-wiring layer on the first surface,the re-wiring layer has a surface electrode formed on a surface and aninternal electrode formed inside thereof, and the internal electrodeconnects the surface electrode and the external connection terminal. 10.The semiconductor device according to claim 9, wherein the surfaceelectrode is provided with a bump.
 11. A semiconductor device assemblingmethod in which a semiconductor element and a plate that is higher inthe rigidity than the semiconductor element are adhered with a resinbinder, the semiconductor element having a first surface on which anexternal connection terminal is formed and a second surface that facesthe first surface, the second surface being adhered to the plate,comprising: a first step of roughly processing according to mechanicalpolishing a side opposite to the first surface on which an externalconnection terminal of the semiconductor element is formed, followed byfurther applying finishing to obtain a second surface from which adamaged layer is removed and to make a thickness of the semiconductorelement 10 μm or more and 150 μm or less; a second step of supplying theresin binder to a plate member including the plate; a third step ofadhering the second surface and the plate in an aligned state by use ofthe resin binder; and a fourth step of cutting the plate from the platemember.
 12. The semiconductor device assembling method according toclaim 11, wherein in the third step, the resin binder is formed with anouter periphery of the semiconductor element covered.
 13. Thesemiconductor device assembling method according to claim 12, wherein byuse of a decrease in the viscosity of the resin binder owing to heating,the resin binder is spread to a side face of the semiconductor elementto cover the outer periphery.
 14. The semiconductor device assemblingmethod according to claim 11, wherein the second step is a step ofsupplying a resin binder by an amount necessary to cover a side face ofthe semiconductor element.
 15. The semiconductor device assemblingmethod according to claim 11, wherein in the second step the resinbinder supplied is liquid, the plate member has a projection surroundingthe plate, and the liquid resin is supplied inside of the projection.16. The semiconductor device assembling method according to claim 11,wherein the resin binder is in sheet, and the second step is a step ofadhering the resin binder sheet to the plate member.
 17. Thesemiconductor device assembling method according to claim 11, whereinthe plate member has a plurality of the plates, and the third stepincludes a step of mounting the semiconductor element through the resinbinder for each of the plates that the plate member has and a step ofheating the plate member on which the semiconductor elements aremounted.
 18. The semiconductor device assembling method according toclaim 17, wherein the third step simultaneously carries out the step ofmounting and the step of heating.
 19. The semiconductor deviceassembling method according to claim 18, wherein the third step iscarried out by use of mounting means of the semiconductor element thatare provided with heating means.
 20. The semiconductor device assemblingmethod according to claim 11, wherein the semiconductor element has are-wiring layer on the first surface.